BTD2098M3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2098M3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386M3
Symbol
Outline
BTD2098M3
SOT-89
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 1/4
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
40
20
6
5
8
*1
0.6
1
*2
2
*3
150
-55~+150
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Note : *1 Single pulse , Pw=10ms
*2 Printed circuit board, glass epoxy board, 1.7mm thick with collector copper plating 10mm*10mm.
*3 When mounted on a 40*40*0.7mm ceramic board.
BTD2098M3
CYStek Product Specification