BTD1864AI3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
40
-
BVCEO
30
-
BVEBO
5
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
0.25
*VBE(sat)
-
-
*hFE1
52
-
*hFE2
82
-
*hFE3
82
-
fT
-
90
Cob
-
45
Classification Of hFE2
Max.
-
-
-
1
1
0.5
2
-
560
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=30V. IE=0
VEB=4V,IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=0.1A
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
BTD1864AI3
CYStek Product Specification