BTD1864AI3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1864AI3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB1243AI3
Spec. No. : C849I3
Issued Date : 2003.04.18
Revised Date :
Page No. : 1/4
Symbol
BTD1864AI3
Outline
TO-251
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
BTD1864AI3
E
C
B
Limits
Unit
40
V
30
V
5
V
3
7
*1
A
1
W
15
150
°C
-55~+150
°C
CYStek Product Specification