BTD1862I3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C842I3
Issued Date : 2003.07.02
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
Min.
40
30
5
-
-
-
82
-
-
Typ.
-
-
-
-
-
-
-
100
50
Classification Of hFE
Max.
-
-
-
1
1
1
560
-
-
Unit
V
V
V
µA
µA
V
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=20V, IE=0
VEB=4V, IC=0
IC=3A, IB=0.1A
VCE=3V, IC=0.5A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
P
82~180
Q
120~270
R
180~390
S
270~560
BTD1862I3
CYStek Product Specification