BTD1862I3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1862I3
Features
• Low VCE(sat), VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A
• Excellent current gain characteristics
• Complementary to BTB1240I3
Spec. No. : C842I3
Issued Date : 2003.07.02
Revised Date :
Page No. : 1/4
Symbol
BTD1862I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Note : Single Pulse , Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Tj
Tstg
BTD1862I3
Limits
Unit
40
V
30
V
5
V
2
A
5 (Note)
A
1
W
10
W
150
°C
-55~+150
°C
CYStek Product Specification