BTD1805D3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C820D3
Issued Date : 2005.03.29
Revised Date :2006.04.21
Page No. : 2/ 4
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage (IE=0)
Collector-Emitter Voltage (IB=0)
Emitter-Base Voltage (IC=0)
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
150
60
7
5
10 (Note 1)
2
1
20
125
8.33
150
-55~+150
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VCE(sat) 4
*VBE(sat)
*hFE 1
*hFE 2
*hFE 3
fT
Cob
ton
tstg
tf
Min.
150
60
7
-
-
-
-
-
-
-
200
85
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
200
240
-
0.9
-
-
-
150
50
50
1.35
120
Max.
-
-
-
0.1
0.1
50
300
400
600
1.2
400
-
-
-
-
-
-
-
Unit
V
V
V
µA
µA
mV
mV
mV
mV
V
-
-
-
MHz
pF
ns
µs
ns
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IC=100µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=100mA, IB=5mA
IC=2A, IB=50mA
IC=3A, IB=150mA
IC=5A, IB=200mA
IC=2A, IB=100mA
VCE=2V, IC=100mA
VCE=2V, IC=5A
VCE=2V, IC=10A
VCE=10V, IC=50mA
VCB=10V, f=1MHz
VCC=30V, IC=10IB1=-10IB2=1A,
RL=30Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD1805D3
CYStek Product Specification