BTD1805D3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD1805D3
Spec. No. : C820D3
Issued Date : 2005.03.29
Revised Date :2006.04.21
Page No. : 1/ 4
Description
The device is manufactured in NPN planar technology by using a “Base Island” layout. The resulting
transistor shows exceptional high gain performance coupled with very low saturation voltage.
Features
• Very low collector-to-emitter saturation voltage
• Fast switching speed
• High current gain characteristic
• Large current capability
• Pb-free package
Applications
• CCFL drivers
• Voltage regulators
• Relay drivers
• High efficiency low voltage switching applications
Symbol
BTD1805D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
BTD1805D3
ECB
CYStek Product Specification