BTC5179S3 Datasheet, PDF (2/3 Pages) Cystech Electonics Corp. – High Frequency NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C213S3
Issued Date : 2003.04.25
Revised Date :
Page No. : 2/3
Electrical Characteristics (TA=25°C)
Parameters
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Cutoff Frequency
Noise Figure
Insertion Gain |S_21e|²
in 50Ω system
Output Capacitance
Conditions
V_CB =3V, IE=0
V_EB =1V
V_CE =2V, I_C =7mA (Note 1)
V_CE =2V, I_C =7mA, f =2GHz
V_CE =1V, I_C =5mA, f =2GHz
V_CE =2V, I_C =3mA, f =2GHz
V_CE =1V, I_C =3mA, f =2GHz
V_CE =2V, I_C =7mA, f =2GHz
V_CE =1V, I_C =5mA, f =2GHz
V_CB =2V, IE=0, f = 1MHz
Symbol Min Typ. Max Unit
I_CBO
-
- 100 nA
I_EBO
-
- 100 nA
h_FE 70 - 140 -
f_T
- 12 15.5 GHz
- 10 13 GHz
NF
- 1.5 2.0 dB
- 1.5 2.0 dB
|S_21e| ²
10
8.5
12
11
-
-
dB
dB
Cob - 0.7 1.0 pF
Note 1: Pulse test: Pulse width≤ 380µs, duty cycle≤ 2%.
BTC5179S3
CYStek Product Specification