BTC5179S3 Datasheet, PDF (1/3 Pages) Cystech Electonics Corp. – High Frequency NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
High Frequency NPN Epitaxial Planar Transistor
BTC5179S3
Spec. No. : C213S3
Issued Date : 2003.04.25
Revised Date :
Page No. : 1/3
Description
The BTC5179S3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification
application.
Symbol
Outline
BTC5179S3
SOT-323
B：Base
C：Collector
E：Emitter
Features
• Low current consumption and high gain:
∣S21e∣² = 12dB ( typ. ) at VCE= 2 V, IC= 7 mA, f = 2 GHz
∣S21e∣² = 11dB ( typ. ) at VCE= 1 V, IC= 5 mA, f = 2 GHz
• Super mini-mold package
Applications
• Low noise and high gain amplifiers & Oscillator buffer amplifiers
Absolute Maximum Ratings (TA=25℃)
Parameters
Symbol
Limits
Unit
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
V_CEO
V_CBO
V_EBO
I_C
Pd
T_j
T_stg
3
V
5
V
2
V
10
mA
30
mW
150
°C
-65~+150
°C
BTC5179S3
CYStek Product Specification