BTC4620T3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
hFE
fT
Cob
Min.
350
350
5
-
-
-
-
80
-
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=50µA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=50µA, IC=0
-
0.1
µA VCB=200V, IE=0
-
0.1
µA VEB=4V, IC=0
0.1
0.6
V
IC=20mA, IB=2mA
1
V
IC=20mA, IB=2mA
-
200
-
VCE=10V, IC=10mA
70
-
MHz VCE=30V, IC=10mA, f=10MHz
2.6
-
pF VCB=30V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
P
80~140
Q
100~200
BTC4620T3
CYStek Product Specification