BTC4620T3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4620T3
Spec. No. : C210T3
Issued Date : 2004.07.01
Revised Date : 2004.07.22
Page No. : 1/4
Features
• High breakdown voltage. (BVCEO =350V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1776T3
Symbol
BTC4620T3
Outline
TO-126
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTC4620T3
ECB
Limit
Unit
350
V
350
V
5
V
100
200
mA
1.2
W
7
150
°C
-55~+150
°C
CYStek Product Specification