BTC1806D3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C819D3
Issued Date : 2012.07.27
Revised Date :
Page No. : 2/6
Thermal Characteristics
Parameter
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
RθJA
RθJC
Value
83.3
8.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
hFE1
hFE2
fT
Cob
Min.
100
50
6
-
-
-
-
0.5
250
80
-
-
Typ.
-
-
-
-
-
0.1
0.23
-
-
-
210
25
Max.
-
-
-
0.1
0.1
0.3
0.4
1.2
500
-
-
-
Unit
V
V
V
µA
µA
V
V
V
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=80V, IE=0
VEB=5V, IC=0
IC=1A, IB=25mA
IC=2A, IB=50mA
IC=1A, IB=100mA
VCE=2V, IC=500mA
VCE=2V, IC=3A
VCE=2V, IC=500mA, f=100MHz
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTC1806D3
Package
TO-126
(Pb-free lead plating package)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
BTC1806D3
CYStek Product Specification