BTC1806D3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
BTC1806D3
Spec. No. : C819D3
Issued Date : 2012.07.27
Revised Date :
Page No. : 1/6
Features
• Low saturation voltage, typically VCE(sat)=0.1V at IC/IB=1A/25mA
• Excellent DC current gain characteristics
• Pb-free lead plating and halogen-free package
Symbol
BTC1806D3
Outline
TO-126ML
B：Base
C：Collector
E：Emitter
BC E
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C
TC=25°C
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
100
V
VCEO
50
V
VEBO
6
V
IC
5
A
ICP
9
A
1.5
PD
W
15
Tj
150
°C
Tstg
-55~+150
°C
BTC1806D3
CYStek Product Specification