BTC1510F3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C652F3
Issued Date : 2004.09.07
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on) 1
*VBE(on) 2
*VFEC
*hFE 1
*hFE 2
Min.
150
150
-
-
-
-
-
-
-
-
-
-
2
100
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
200
200
2
2
3
1.5
2
2.8
4.5
3
20
-
Unit
Test Conditions
V
IC=100µA, IE=0
V
IC=1mA, IB=0
µA VCE=150V, IE=0
µA VCB=150V, IE=0
mA VEB=5V, IC=0
V
IC=5A, IB=10mA
V
IC=10A, IB=100mA
V
IC=5A, IB=2.5mA
V
IC=5A, IB=5mA
V
VCE=3V, IC=5A
V
VCE=3V, IC=10A
V
IC=5A
K
VCE=3V, IC=5A
-
VCE=3V, IC=10A
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Current Gain vs Collector Current
100000
10000
HFE@VCE=3V
125℃
1000
75℃
100
25℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VCE(SAT)@IC=250IB
25℃
1000
100
100
75℃
125℃
1000
Collector Current---IC(mA)
10000
BTC1510F3
CYStek Product Specification