BTC1510F3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTC1510F3
Spec. No. : C652F3
Issued Date : 2004.09.07
Revised Date :
Page No. : 1/4
Description
The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High BVCEO
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
Equivalent Circuit
BTC1510F3
C
B
R1 8k R2 120
B：Base
E
C：Collector
E：Emitter
Outline
TO-263
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
BTC1510F3
Limits
Unit
150
V
150
V
5
V
10
15 *1
A
2
W
60
150
°C
-55~+150
°C
CYStek Product Specification