BTB857D3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C601D3
Issued Date : 2008.12.23
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-100
-100
-5
-
-
-
-
-
180
100
-
Typ.
Max.
Unit Test Conditions
-
-
V
IC=-50μA, IE=0
-
-
V
IC=-10mA, IB=0
-
-
V
IE=-50μA, IC=0
-
-1
μA VCB=-100V, IE=0
-
-10
μA VCE=-80V, IB=0
-
-1
μA VEB=-5V, IC=0
-0.3
-0.6
V
IC=-2A, IB=-200mA
-
-1.2
V
IC=-2A, IB=-200mA
-
390
-
VCE=-3V, IC=-500mA
-
-
-
VCE=-2V, IC=-1A
15
-
MHz VCE=-5V, IC=-500mA, f=100MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTB857D3
Package
TO-126ML
(RoHS compliant)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
Marking
B857
BTB857D3
CYStek Product Specification