BTB772SA3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C817A3-H
Issued Date : 2003.05.31
Revised Date:2004.07.02
Page:2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-50
-50
-5
-
-
-
-
52
100
-
-
Typ.
-
-
-
-
-
-0.3
-1
-
-
80
55
Classification Of hFE2
Max.
-
-
-
-1
-1
-0.5
-2
-
500
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-30V, IE=0
VEB=-3V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-1A
VCE=-5V, IC=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Rank
Range
Q
100~200
P
160~320
E
250~500
Characteristic Curves
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
100
1000 10000
Collector current---IC(mA)
BTB772SA3
C-E saturation voltage vs Collector current
10000
1000
100 _IC=40IB
10
IC=10IB
IC=20IB
1
1
10
100
1000
Collector current---IC(mA)
10000
CYStek Product Specification