BTB772SA3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB772SA3
Features
• Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.2A
• Excellent current gain characteristics
• Complementary to BTD882SA3
Spec. No. : C817A3-H
Issued Date : 2003.05.31
Revised Date:2004.07.02
Page:1/4
Symbol
BTB772SA3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350µs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd
Tj
Tstg
BTB772SA3
ECB
Limit
Unit
-50
V
-50
V
-5
V
-3
A
-7 (Note)
A
750
mW
150
°C
-55~+150
°C
CYStek Product Specification