BTB772NUT3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C631T3
Issued Date : 2017.04.18
Revised Date:
Page:2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
DC
Pulse
Ta=25℃
Tc=25℃
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦300μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj ; Tstg
Limit
Unit
-40
V
-30
V
-12
V
-3
A
-7 *1
A
1
W
10
-55~+150
°C
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
Symbol
RθJA
RθJC
Limit
125
12.5
Unit
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
-40
-30
-12
-
-
-
-
120
160
-
-
Typ.
-
-
-
-
-
-0.2
-1
-
-
80
55
Max.
-
-
-
-100
-100
-0.5
-1.5
-
320
-
-
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-30V, IE=0
VEB=-12V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE 2
Rank
Range
P
180~390
BTB772NUT3
CYStek Product Specification