BTB772J3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2010.12.08
Page:2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
Min.
Typ.
-40
-
-30
-
-6
-
-
-
-
-
-
-0.45
-
-1
120
-
180
-
-
80
-
55
Classification Of hFE 2
Max.
-
-
-
-1
-1
-0.6
-1.5
-
500
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-6V, IC=0
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-5V, IE=-0.1A, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Rank
Range
P
180~390
E
250~500
Ordering Information
Device
BTB772J3
Package
TO-252
(RoHS compliant package)
Shipping
2500 pcs / Tape & Reel
Marking
B772
Recommended Storage Condition:
Temperature : 10~ 35 °C
Humidity : 30~ 60% RH
Recommended soldering footprint
BTB772J3
CYStek Product Specification