BTB772J3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C809J3
Issued Date : 2008.06.12
Revised Date: 2010.12.08
Page:1/7
Low Vcesat PNP Epitaxial Planar Transistor
BTB772J3
BVCEO
IC
RCE(SAT)
-30V
-3A
225mΩ typ.
Features
• Low VCE(sat)
• Excellent current gain characteristics
• Complementary to BTD882J3
• RoHS compliant package
Symbol
BTB772J3
Outline
TO-252AB
TO-252AA
B：Base
C：Collector
E：Emitter
BCE
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350μs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Tj
Tstg
BTB772J3
Limit
Unit
-40
V
-30
V
-6
V
-3
A
-5
*1
A
1.25
W
10
150
°C
-55~+150
°C
CYStek Product Specification