BTB1386N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low VCE(sat) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-15
-
BVCEO
-12
-
BVEBO
-6
-
ICBO
-
-
IEBO
-
-
*VCE(sat)
-
-
*hFE 1
200
-
*hFE 2
180
-
*hFE 3
150
-
fT
-
250
Cob
-
60
Classification Of hFE 2
Max.
-
-
-
-100
-100
-0.25
-
820
-
-
-
Unit
V
V
V
nA
nA
V
-
-
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-15V
VEB=-5V
IC=-1A, IB=-50mA
VCE=-2V, IC=-20mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-2A
VCE=-2V, IC=-200mA, f=100MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Rank
R
S
T
Range
180~390 270~560 390~820
BTB1386N3
CYStek Product Specification