BTB1386N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low VCE(sat) PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
BTB1386N3
Spec. No. : C816N3-R
Issued Date : 2003.12.18
Revised Date :
Page No. : 1/4
Features
• Excellent DC current gain characteristics
• Low Saturation Voltage, VCE(sat)=-0.25V(typ)
Applications
• Low frequency amplifier
• Driver
Symbol
BTB1386N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
Collector Current(Pulsed)(Note 1)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note 1: Single pulse, Pw≤10ms, Duty Cycle≤30%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
BTB1386N3
Limits
-15
-12
-6
-4
-8
225
556
150
-55~+150
Unit
V
V
V
A
mW
°C/W
°C
°C
CYStek Product Specification