BTB1386M3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C815M3
Issued Date : 2005.03.25
Revised Date : 2005.10.20
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
-30
-
-20
-
-6
-
-
-
-
-
-
-0.25
-
-0.3
-
-1.0
120
-
-
120
-
60
Max.
-
-
-
-0.5
-0.5
-0.4
-0.5
-1.3
390
-
-
Classification of hFE
Rank
Range
Q
120~270
R
180~390
Unit
V
V
V
µA
µA
V
V
V
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-25V, IE=0
VEB=-5V, IC=0
IC=-3A, IB=-60mA
IC=-4A, IB=-0.1A
IC=-3A, IB=-60mA
VCE=-2V, IC=-0.5A
VCE=-6V, IC=-50mA, f =30MHz
VCB=-20V, f =1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTB1386M3
Package
SOT-89
(Pb-free)
Shipping
1000 pcs / Tape & Reel
Marking
BH
BTB1386M3
CYStek Product Specification