BTB1386M3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB1386M3
Spec. No. : C815M3
Issued Date : 2005.03.25
Revised Date : 2005.10.20
Page No. : 1/5
Features
• Low VCE(sat), VCE(sat)=-0.25 V (typical), at IC / IB = -3A / -60mA
• Excellent DC current gain characteristics
• Complementary to BTD2098M3
• Pb-free package
Symbol
BTB1386M3
Outline
SOT-89
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
VCBO
VCEO
VEBO
IC
ICP
Pd
Pd
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw=10ms
2. When mounted on a 40 ×40 ×0.7 mm ceramic board.
BTB1386M3
Limits
Unit
-30
V
-20
V
-6
V
-5
-10 (Note 1)
A
0.5
2 (Note 2)
W
150
°C
-55~+150
°C
CYStek Product Specification