BTB1236AI3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Silicon PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C315I3
Issued Date : 2012.01.16
Revised Date :
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
12.5
125
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
-180
-160
-5
-
-
-
-
180
80
-
-
Typ.
-
-
-
-
-
-
-
-
-
180
24
Max.
-
-
-
-1
-1
-0.6
-1.5
390
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=-50µA, IE=0
IC=-1mA, IB=0
IE=-50µA, IC=0
VCB=-160V, IE=0
VEB=-4V, IC=0
IC=-1A, IB=-100mA
VCE=-5V, IC=-150mA
VCE=-5V, IC=-100mA
VCE=-5V, IC=-500mA
VCE=-5V, IC=-150mA
VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTB1236AI3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
B1236A
BTB1236AI3
CYStek Product Specification