BTB1236AI3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Silicon PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
BTB1236AI3
Spec. No. : C315I3
Issued Date : 2012.01.16
Revised Date :
Page No. : 1/5
Description
• High BVCEO
• High current capability
• Complementary to BTD1857AI3
• RoHS compliant package
Symbol
BTB1236AI3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
BTB1236AI3
Limits
Unit
-180
V
-160
V
-5
V
-1.5
A
-3 (Note)
A
1
W
10
W
-55~+150
°C
-55~+150
°C
CYStek Product Specification