BTA1952J3_09 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Min.
-100
-80
-5
-
-
-
-
100
120
-
Typ.
Max.
Unit Test Conditions
-
-
V
IC=-50μA, IE=0
-
-
V
IC=-1mA, IB=0
-
-
V
IE=-50μA, IC=0
-
-10
μA VCB=-100V, IE=0
-
-10
μA VEB=-5V, IC=0
-0.3
-1.0
V
IC=-2A, IB=-0.2A
-
-1.5
V
IC=-2A, IB=-0.2A
-
-
-
VCE=-3V, IC=-0.5A
-
390
-
VCE=-2V, IC=-1A
120
-
MHz VCE=-5V, IC=-500mA, f=30MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 2
Rank
Q
R
Range
120~270 180~390
Ordering Information
Device
BTA1952J3
Package
TO-252
(RoHS-compliant)
Shipping
2500 pcs / tape & reel
Marking
A1952
BTA1952J3
CYStek Product Specification