BTA1952J3_09 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTA1952J3
BVCEO
IC
RCESAT
Spec. No. : C601J3
Issued Date : 2004.05.17
Revised Date :2009.02.04
Page No. : 1/6
-100V
-5A
150mΩ
Features
• Low VCE(sat), VCE(sat)=-0.3 V (typical), at IC / IB = -2A / -0.2A
• Excellent DC current gain characteristics
• Wide SOA
• Complementary to BTC5103J3
• RoHS compliant package
Symbol
BTA1952J3
Outline
TO-252
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
BTA1952J3
Limits
Unit
-100
V
-80
V
-5
V
-5
-10
*1
A
1
W
10
150
°C
-55~+150
°C
CYStek Product Specification