BTA1759N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C309N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICER
IEBO
*VCE(sat)
*VBE(sat)
*hFE
fT
Cob
Min.
-400
-400
-7
-
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
-
-0.08
-
-
12
13
Max.
-
-
-
-10
-20
-10
-0.5
-1.2
270
-
-
Unit
V
V
V
µA
nA
µA
V
V
-
MHz
pF
Test Conditions
IC=-50µA
IC=-1mA
IE=-50µA
VCB=-400V
VCE=-300V, REB=4kΩ
VEB=-6V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-10mA, f=5MHz
VCB=-10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
BTA1759N3
CYStek Product Specification