BTA1759N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C309N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 1/4
BTA1759N3
Description
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.
• Wide SOA (safe operation area).
• Complementary to BTC4505N3.
Symbol
BTA1759N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current
IC
-300
mA
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
BTA1759N3
CYStek Product Specification