BTA1640I3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657I3
Issued Date : 2007.04.04
Revised Date :2009.02.04
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
Min.
-50
-60
-5
-
-
-
-
-
120
30
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-10mA, IB=0
-
-
V
IC=-1mA, IE=0
-
-
V
IE=-1mA, IC=0
-
-50
μA VCE=-30V, IB=0
-
-1
μA VCB=-50V, IB=0
-
-1
μA VEB=-5V, IC=0
-0.2
-0.4
V
IC=-3A, IB=-150mA
-
-1.2
V
IC=-3A, IB=-150mA
-
400
-
VCE=-1V, IC=-1A
-
-
-
VCE=-1V, IC=-3A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 1
Rank
Y
Range
120~240
G
200~400
Ordering Information
Device
BTA1640I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
A1640
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=2V
100
VCE=1V
10000
Saturation Voltage vs Collector Current
VCE(SAT)
1000
100
IC=30IB
IC=50IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTA1640I3
CYStek Product Specification