BTA1640I3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657I3
Issued Date : 2007.04.04
Revised Date :2009.02.04
Page No. : 1/5
PNP Epitaxial Planar Power Transistor
BTA1640I3
BVCEO
IC
RCESAT
-50V
-7A
70mΩ
Features
• Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.15A
• Excellent current gain linearity
• RoHS compliant package
Symbol
BTA1640I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
BB _{CC E}
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : 1. Single Pulse , Pw≦380μs, Duty≦2%.
BTA1640I3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
-60
-50
-5
-7
-10 (Note 1)
1
20
125
6.25
150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification