BTA1640F3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657F3
Issued Date : 2010.09.21
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
*BVCEO
BVCBO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
Min.
-30
-30
-18
-
-
-
-
-
180
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=-10mA, IB=0
-
-
V
IC=-1mA, IE=0
-
-
V
IE=-1mA, IC=0
-
-50
μA VCE=-30V, IB=0
-
-10
μA VCB=-30V, IB=0
-
-10
μA VEB=-18V, IC=0
-
-0.4
V
IC=-3A, IB=-100mA
-
-1
V
IC=-3A, IB=-100mA
-
350
-
VCE=-2V, IC=-200mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
BTA1640F3
Package
TO-263
(Pb-free lead plating package)
Shipping
800 pcs / Tape & Reel
Marking
A1640
Typical Characteristics
Current Gain vs Collector Current
1000
VCE=2V
Saturation Voltage vs Collector Current
1000
VCE(SAT)
100
10
1
VCE=1V
10
100
1000
Collector Current---IC(mA)
10000
100
IC=50IB
10
1
10
100
1000
Collector Current---IC(mA)
10000
BTA1640F3
CYStek Product Specification