BTA1640F3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Power Transistor

CYStech Electronics Corp.
Spec. No. : C657F3
Issued Date : 2010.09.21
Revised Date :
Page No. : 1/6
PNP Epitaxial Planar Power Transistor
BTA1640F3
BVCEO -30V
IC
-7A
VCE(SAT) -0.4V(max)
Features
• Low collector-emitter saturation voltage, VCE(sat) = -0.4V(max) @ IC = -3A, IB=-0.1A
• Excellent current gain linearity
• Pb-free lead plating package
Symbol
BTA1640F3
Outline
TO-263
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse , Pw≦300μs, Duty≦2%.
BTA1640F3
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
-30
-30
-18
-7
-10 (Note 1)
2
60
62.5
2.08
-55~+150
-55~+150
Unit
V
V
V
A
W
°C/W
°C/W
°C
°C
CYStek Product Specification