BTA1514N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C307N3
Issued Date : 2002.06.11
Revised Date : 2002.12.04
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO -160
-
-
V
IC=-50uA
BVCEO -150
-
-
V
IC=-1mA
BVEBO
-5
-
-
V
IE=-50uA
ICBO
-
-
-50
nA VCB=-120V
IEBO
-
-
-50
nA VEB=-4V
*VCE(sat)1
-
-
-0.2
V
IC=-10mA, IB=-1mA
*VCE(sat)2
-
-
-0.5
V
IC=-50mA, IB=-5mA
*VBE(sat)1
-
-
-1
V
IC=-10mA, IB=-1mA
*VBE(sat)2
-
-
-1
V
IC=-50mA, IB=-5mA
*hFE1
50
-
-
-
VCE=-5V, IC=-1mA
*hFE2
60
-
-
-
VCE=-5V, IC=-10mA
*hFE3
50
-
-
-
VCE=-5V, IC=-50mA
*hFE4
52
-
390
-
VCE=-6V, IC=-2mA
fT
100
-
-
MHz VCE=-30V, IE=10mA, f=100MHz
Cob
-
-
6
pF VCB=-30V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE4
Rank
Range
K
52~120
P
82~180
Q
120~270
R
180~390
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
100
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
10
0.1
1
10
100
Collector Current---IC(mA)
10
0.1
1
10
100
Collector Current---IC(mA)
BTA1514N3
CYStek Product Specification