BTA1514N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C307N3
Issued Date : 2002.06.11
Revised Date : 2002.12.04
Page No. : 1/4
BTA1514N3
Description
• The BTA1514N3 is designed for general purpose applications requiring high breakdown
voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=150V @ IC=1mA)
• Complement to NPN type BTC3906N3
Equivalent Circuit
BTA1514N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
BTA1514N3
Limits
Unit
-160
V
-150
V
-5
V
600
mA
225
mW
150
°C
-55~+150
°C
CYStek Product Specification