MTB020N03V8 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB020N03V8
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
30V
10A
18A
14.0mΩ
17.5mΩ
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating package
Equivalent Circuit
MTB020N03V8
Outline
DFN3×3
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
MTB020N03V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N03V8
CYStek Product Specification