BTD2118LJ3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – CYStech Electronics Corp.

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2118LJ3
Spec. No. : C850J3
Issued Date : 2004.02.27
Revised Date :2005.10.04
Page No. : 1/4
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1412LJ3
• Pb-free package
Symbol
BTD2118LJ3
Outline
TO-252
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD(TA=25℃)
PD(TC=25℃)
Tj
Tstg
Limits
Unit
40
V
15
V
6
V
5
A
8 (Note 1)
A
1
W
10
W
150
°C
-55~+150
°C
BTD2118LJ3
CYStek Product Specification