BTB818AG6 Datasheet, PDF (1/9 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB818AG6
Spec. No. : C240G6
Issued Date : 2013.05.03
Revised Date : 2013.08.29
Page No. : 1/9
Features
• Low VCE(sat), VCE(sat)=-0.11V (typical), at IC / IB =- 500mA /- 5mA
• Pb-free lead plating and halogen-free package
Equivalent Circuit
BTB818AG6
Outline
TSOP-6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-7
V
Collector Current(DC)
IC
-3
A
Peak Collector Current
ICM
-6
*1
A
Peak Base Current
IBM
-500
mA
Power Dissipation
Thermal Resistance, Junction to Ambient
PD
1.2
*2
W
RθJA
104
°C/W
Operating Junction and Storage Temperature Range Tj;Tstg
-55~+150
°C
Note :1 Single pulse, Pw=10ms
2. When mounted on 25mm×25mm×1.6 mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air
condition.
BTB818AG6
CYStek Product Specification