STK12C68_11 Datasheet, PDF (9/24 Pages) Cypress Semiconductor – 64 Kbit (8K x 8) AutoStore nvSRAM 25 ns, 35 ns, and 45 ns access times

STK12C68
Data Retention and Endurance
Parameter
Description
DATA_R
NV_C
Data Retention
Nonvolatile STORE Operations
Min
100
1,000
Unit
Years
K
Capacitance
In the following table, the capacitance parameters are listed.^[6]
Parameter
Description
C_IN
C_OUT
Input Capacitance
Output Capacitance
T_A = 25°C, f = 1 MHz,
V_CC = 0 to 3.0 V
Test Conditions
Max
Unit
8
pF
7
pF
Thermal Resistance
In the following table, the thermal resistance parameters are listed.^[6]
nly. _{Parameter Description}
Test Conditions
28-SOIC
ms ^{o Θ}_JA ^{Thermal Resis-}
ra tance
Test conditions follow
standard test methods and
46.55
g _{(Junction to}
procedures for measuring
ro _Ambient)
thermal impedance, per EIA /
. tion p ΘJC Thermal Resis-
tance
JESD51.
27.95
ns ^{uc (Junction to Case)}
28-PDIP
(300 mil)
45.16
31.62
28-PDIP
(600 mil)
55.84
25.74
28-CDIP
46.1
5.01
28-LCC
95.31
9.01
Unit
°C/W
°C/W
New _nDgeosiingg ^prod 5.0V
R1 963Ω
Figure 6. AC Test Loads
5.0V
R1 963Ω _{For Tri-state Specs}
mendteodsufoprport ^{o Output}
30 pF
R2
512Ω
Output
5 pF
R2
512Ω
Recomuction ^{AC Test Conditions}
Not prod Input Pulse Levels .................................................. 0 V to 3 V
In ^{Input Rise and Fall Times (10% to 90%) ...................... <5 ns}
Input and Output Timing Reference Levels .......................1.5
Note
6. These parameters are guaranteed by design and are not tested.
Document Number: 001-51027 Rev. *C
Page 9 of 24
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