CY14B101LA Datasheet, PDF (9/24 Pages) Cypress Semiconductor – 1 Mbit (128K x 8/64K x 16) nvSRAM

PRELIMINARY
CY14B101LA, CY14B101NA
Data Retention and Endurance
Parameter
DATA_R
NV_C
Description
Data Retention
Nonvolatile STORE Operations
Min
Unit
20
Years
200
K
Capacitance
Parameter^[13]
C_IN
C_OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T_A = 25°C, f = 1 MHz,
V_CC = V_CC (Typ)
Max
Unit
7
pF
7
pF
Thermal Resistance
Parameter^[13]
Θ_JA
Θ_JC
Description
Test Conditions
54-TSOP II 48-SSOP 44-TSOP II
Thermal Resistance Test conditions follow standard
(Junction to Ambient) test methods and procedures for
Thermal Resistance ^{measuring thermal impedance,}
(Junction to Case) ^{in accordance with EIA/JESD51.}
30.73
6.08
TBD
TBD
31.11
5.56
32-SOIC
TBD
TBD
Unit
°C/W
°C/W
Figure 5. AC Test Loads
3.0V
OUTPUT
30 pF
577Ω
R1
R2
789Ω
3.0V
OUTPUT
5 pF
577Ω
R1
for tristate specs
R2
789Ω
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
13. These parameters are guaranteed by design and are not tested.
Document #: 001-42879 Rev. *C
Page 9 of 24
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