W158 Datasheet, PDF (7/12 Pages) Cypress Semiconductor – Spread Spectrum System Frequency Synthesizer

W158
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
.
Parameter
Description
V_DD, V_IN
T_STG
T_A
T_B
ESD_PROT
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Input ESD Protection
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
2 (min.)
kV
DC Electrical Characteristics: T_A = 0°C to +70°C, V_DDQ3 = 3.3V±5%, V_DDQ2 = 2.5V±5%
Parameter
Description
Test Condition
Min.
Typ.
Supply Current
I_DD-3.3V
Combined 3.3V Supply Current
I_DD-2.5
Combined 2.5V Supply Current
Logic Inputs (All referenced to V_DDQ3 = 3.3V)
V_IL
Input Low Voltage
CPU0:3 =133 MHz^[29]
CPU0:3 =133 MHz^[29]
GND
–0.3
V_IH
Input High Voltage
2.0
I_IL
Input Low Current^[30]
I_IH
Input High Current^[30]
I_IL
Input Low Current, SEL133/100#^[30]
I_IH
Input High Current, SEL133/100#^[30]
Clock Outputs
CPU, CPUdiv2, IOAPIC (Referenced to V_DDQ2)
Test Condition
V_OL
Output Low Voltage
I_OL = 1 mA
V_OH
Output High Voltage
I_OH = –1 mA
I_OL
Output Low Current
V_OL = 1.25V
I_OH
Output High Current
V_OH = 1.25V
48MHz, REF (Referenced to V_DDQ3)
Test Condition
V_OL
Output Low Voltage
I_OL = 1 mA
V_OH
Output High Voltage
I_OH = –1 mA
I_OL
Output Low Current
V_OL = 1.5V
I_OH
Output High Current
V_OH = 1.5V
PCI, 3V66 (Referenced to V_DDQ3)
Test Condition
V_OL
Output Low Voltage
I_OL = 1 mA
V_OH
Output High Voltage
I_OH = –1 mA
I_OL
Output Low Current
V_OL = 1.5V
I_OH
Output High Current
V_OH = 1.5V
Notes:
29. All clock outputs loaded with 6" 60Ω transmission lines with 20-pF capacitors.
30. W158 logic inputs have internal pull-up devices, except SEL133/100# (pull-ups not CMOS level).
Min.
2.2
45
45
Min.
3.1
45
45
Min.
3.1
70
65
Typ.
65
65
Typ.
65
65
Typ.
100
95
Max.
Unit
160
mA
90
mA
0.8
V
VDD+
V
0.3
–25
µA
10
µA
–5
µA
5
µA
Max.
Unit
50
mV
V
100
mA
100
mA
Max.
Unit
50
mV
V
100
mA
100
mA
Max.
Unit
50
mV
V
145
mA
135
mA
7