CY8C20140_09 Datasheet, PDF (7/15 Pages) Cypress Semiconductor – CapSense Express-4 Configurable IOs

CY8C20140
Electrical Specifications
Absolute Maximum Ratings
Parameter
Description
Min Typ Max Unit
Notes
T_STG
Storage temperature
–55 25 +100 °C Higher storage temperatures reduce data
retention time. Recommended storage
temperature is +25°C ± 25°C (0°C to 50°C).
Extended duration storage temperatures
above 65°C degrade reliability
T_A
Ambient temperature with power
–40
–
+85
°C
applied
V_DD
V_IO
V_IOZ
I_MIO
ESD
Supply voltage on V_DD relative to V_SS –0.5
–
+6.0
V
DC input voltage
V_SS – 0.5 – V_DD + 0.5 V
DC voltage applied to tri-state
V_SS – 0.5 – V_DD + 0.5 V
Maximum current into any GPIO pin –25
–
+50
mA
Electro static discharge voltage
2000 –
–
V Human body model ESD
LU
Latch up current
–
–
200
mA
Operating Temperature
Parameter
Description
T_A
Ambient temperature
T_J
Junction temperature
Min Typ Max Unit
–40
–
+85
°C
–40
–
+100 °C
Notes
DC Electrical Characteristics
DC Chip Level Specifications
Parameter
Description
Min Typ Max Unit
Notes
V_DD
Supply voltage
2.40
–
5.25
V
I_DD
Supply current
–
1.5
2.5
mA Conditions are V_DD = 3.10V, T_A = 25°C
I_SB
Deep sleep mode current with POR –
2.6
4
µA V_DD = 2.55V, 0°C < T_A < 40°C
and LVD active. Mid temperature
range
I_SB
Deep sleep mode current with POR –
2.8
5
µA V_DD = 3.3V, –40°C < T_A < 85°C
and LVD active
I_SB
Deep sleep mode current with POR –
5.2
6.4
µA V_DD = 5.25V, –40°C < T_A < 85°C
and LVD active
Document Number: 001-17348 Rev. *F
Page 7 of 15
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