CY8C20140_09 Datasheet, PDF (10/15 Pages) Cypress Semiconductor – CapSense Express-4 Configurable IOs

CY8C20140
DC Programming Specifications
This table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V and
-40°C<TA<85°C, 3.10V to 3.6V and -40°C<TA<85°C, or 2.4V to 2.90V and -40°C<TA<85°C, respectively. Typical parameters apply
to 5V, 3.3V, or 2.7V at 25°C. These are for design guidance only. Flash Endurance and Retention specifications with the use of
EEPROM user module are valid only within the range: 25°C±20°C during the Flash Write operation.
Refer to the EEPROM user module data sheet instructions for EEPROM Flash Write requirements outside the 25°C±20°C temperature
window. Use of this User Module for Flash Writes outside this range must occur at a known die temperature (±20°C) and requires the
designer to configure the temperature as a variable rather than the default 25°C value hard coded into the API. All use of this UM API
outside the range of 25°C±20°C is at the user’s own risk. This risk includes overwriting the Flash cell (when above the allowable
temperature range) thereby reducing the data sheet specified endurance performance or underwriting the Flash cell (when below the
allowable temperature range) thereby reducing the data sheet specified retention.
Symbol
Description
Min
Typ
Vdd_IWRITE Supply Voltage for Flash Write Operations^[2]
2.7
–
I_DDP
Supply Current During Programming or Verify –
5
V_ILP
Input Low Voltage During Programming or
Verify
–
–
V_IHP
Input High Voltage During Programming or
2.2
–
Verify
I_ILP
Input Current when Applying Vilp to P1[0] or
–
–
P1[1] During Programming or Verify
I_IHP
Input Current when Applying Vihp to P1[0] or
–
–
P1[1] During Programming or Verify
V_OLV
Output Low Voltage During Programming or
–
–
Verify
V_OHV
Output High Voltage During Programming or Vdd
–
Verify
–1.0
Flash_ENPB Flash Endurance (per block)
Flash_ENT Flash Endurance (total)
50,000 –
1,800,0 –
00
Flash_DR Flash Data Retention
10
–
CapSense Electrical Characteristics
Max Units
–
V
25
mA
0.8
V
Notes
–
V
0.2
1.5
Vss +
0.75
Vdd
mA Driving internal pull down
resistor.
mA Driving internal pull down
resistor.
V
V
–
– Erase/write cycles per block.
–
– Erase/write cycles.
–
Years
Max (V)
3.6
Typical (V)
3.3
3.10
2.7
3.6
3.3
5.25
5.0
Min (V)
3.10
2.45
3.10
4.75
Conditions for Supply Voltage
Result
<2.9V
The device automatically reconfigures itself to work in
2.7V mode of operation.
<2.45V
The scanning for CapSense parameters shuts down
until the voltage returns to over 2.45V.
<2.4V
The device goes into reset.
>3.10V
The device automatically reconfigures itself to work in
3.3V mode of operation.
<4.73V
The scanning for CapSense parameters shuts down
until the voltage returns to over 4.73V.
3.6 to 4.75V
This range is not supported by CapSense Express.
The device will work, but CapSense scanning is not
enabled until the voltage goes above 4.73V.
2.9 to 3.1V
This range is not supported by CapSense Express.
Note
2. Commands involving Flash Writes (0x01, 0x02, 0x03) must be executed only within the same VCC voltage range detected at POR (power on, XRES, or command
0x06) and above 2.7V. For register details, refer to CY8C201xx Register Reference Guide. If the user powers up the device in the 2.4V–3.6V range, Flash writes must
be performed only in the range 2.7V to 2.9V and 3.10V to 3.6V. If the user powers up the device in the 4.75V to 5.25V range, Flash writes must be performed in that
range only.
Document Number: 001-17348 Rev. *F
Page 10 of 15
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