CY7C1323AV25 Datasheet, PDF (7/18 Pages) Cypress Semiconductor – 18-Mbit 4-Word Burst SRAM with DDR-I Architecture

PRELIMINARY
CY7C1323AV25
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V_DD Relative to GND.........−0.5V to +3.6V
DC Applied to Outputs in High-Z...........−0.5V to V_DDQ + 0.5V
DC Input Voltage^[11] ................................−0.5V to V_DDQ + 0.5V
Electrical Characteristics Over the Operating Range^[13]
DC Electrical Characteristics
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Ambient
Range Temperature (T_A)
Com’l
0°C to +70°C
V_DD^[12]
2.5 ± 0.1V
V_DDQ^[12]
1.4V to 1.9V
Parameter
Description
V_DD
V_DDQ
V_OH
V_OL
V_OH(LOW)
V_OL(LOW)
V_IH
V_IL
V_IN
I_X
I_OZ
V_REF
I_DD
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage^[11]
Input LOW Voltage^{[11, 16]}
Clock Input Voltage
Input Load Current
Output Leakage Current
Input Reference Voltage^[17]
V_DD Operating Supply
I_SB1
Automatic
Power-Down
AC Input Requirements
Parameter
Description
V_IH
Input High (Logic 1) Voltage
V_IL
Input Low (Logic 0) Voltage
Test Conditions
Min.
2.4
1.4
Note 14
Note 15
I_OH = –0.1 mA, Nominal Impedance
I_OL = 0.1 mA, Nominal Impedance
V_DDQ/2 – 0.12
V_DDQ/2 – 0.12
V_DDQ – 0.2
V_SS
V_REF + 0.1
–0.3
–0.3
GND ≤ V_I ≤ V_DDQ
GND ≤ V_I ≤ V_DDQ, Output Disabled
Typical Value = 0.75V
–5
–5
0.68
V_DD = Max., I_OUT = 0 mA, 100 MHz
f = f_MAX = 1/t_CYC
133 MHz
167 MHz
Max. V_DD, Both Ports 100 MHz
Deselected, V_IN ≥ V_IH or
V_IN ≤ V_IL f = f_MAX = 1/t_CYC,
Inputs Static
133 MHz
167 MHz
Test Conditions
Min.
V_REF + 0.2
–
Typ.
2.5
1.5
0.75
Typ.
–
–
Max.
Unit
2.6
V
1.9
V
V_DDQ/2 + 0.12 V
V_DDQ/2 + 0.12 V
V_DDQ
V
0.2
V
V_DDQ + 0.3 V
V_REF – 0.1 V
V_DDQ + 0.3 V
5
µA
5
µA
0.95
V
590
mA
620
mA
650
mA
360
mA
380
mA
400
mA
Max.
–
V_REF – 0.2
Unit
V
V
Thermal Resistance^[18]
Parameter
Description
Test Conditions
165 FBGA Package
Θ_JA
Thermal Resistance (Junction to Ambient) Test conditions follow standard test
16.7
Θ_JC
Thermal Resistance (Junction to Case)
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
2.5
Notes:
11. Overshoot: V_IH(AC) < V_DDQ + 0.85V (Pulse width less than t_CYC/2). Undershoot: V_IL(AC) > –1.5V (Pulse width less than t_CYC/2).
12. Power-up: Assumes a linear ramp from 0V to V_DD(min.) within 200 ms. During this time V_IH < V_DD and V_DDQ < V_DD.
13. All Voltage referenced to Ground.
14. Output are impedance controlled. I_OH = –(V_DDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
15. Output are impedance controlled. I_OL=(V_DDQ/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ωs.
16. This spec is for all inputs except C and C Clock. For C and C Clock, V_IL(Max.) = V_REF – 0.2V.
17. V_REF (Min.) = 0.68V or 0.46V_DDQ, whichever is larger, V_REF (Max.) = 0.95V or 0.54V_DDQ, whichever is smaller.
18. Tested initially and after any design or process change that may affect these parameters.
Unit
°C/W
°C/W
Document #: 38-05501 Rev. *A
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