W181 Datasheet, PDF (5/9 Pages) Cypress Semiconductor – Peak Reducing EMI Solution

W181
Absolute Maximum Ratings
Stresses greater than those listed in this table may cause per-
manent damage to the device. These represent a stress rating
only. Operation of the device at these or any other conditions
above those specified in the operating sections of this specifi-
cation is not implied. Maximum conditions for extended peri-
ods may affect reliability.
Parameter
V_DD, V_IN
T_STG
T_A
T_B
P_D
Description
Voltage on any pin with respect to GND
Storage Temperature
Operating Temperature
Ambient Temperature under Bias
Power Dissipation
Rating
Unit
–0.5 to +7.0
V
–65 to +150
°C
0 to +70
°C
–55 to +125
°C
0.5
W
DC Electrical Characteristics: 0°C < T_A < 70°C, V_DD = 3.3V ±5%
Parameter
Description
Test Condition
I_DD
Supply Current
t_ON
Power-Up Time
First locked clock cycle after Power
Good
V_IL
Input Low Voltage
V_IH
Input High Voltage
V_OL
Output Low Voltage
V_OH
Output High Voltage
I_IL
Input Low Current
Note 1
I_IH
Input High Current
Note 1
I_OL
Output Low Current
@ 0.4V, V_DD = 3.3V
I_OH
Output High Current
@ 2.4V, V_DD = 3.3V
C_I
Input Capacitance
All pins except CLKIN
C_I
Input Capacitance
CLKIN pin only
R_P
Input Pull-Up Resistor
Z_OUT
Clock Output Impedance
Note:
1. Inputs FS1:2 have a pull-up resistor; Input SSON# has a pull-down resistor.
Min.
2.4
2.4
Typ.
18
15
15
6
500
25
Max.
Unit
32
mA
5
ms
0.8
V
V
0.4
V
V
–100
µA
10
µA
mA
mA
7
pF
10
pF
kΩ
Ω
5