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CY7C197N_11 Datasheet, PDF (5/13 Pages) Cypress Semiconductor – 256 K × 1 Static RAM CMOS for optimum speed/power
CY7C197N
Figure 2. AC Test Loads and Waveforms[5]
5V
OUTPUT
R1 329
5V
OUTPUT
R1 329 
30 pF
INCLUDING
JIG AND
SCOPE
R2
202 
5 pF
R2
255 
(255 MIL) INCLUDING
(255 MIL)
JIG AND
(a)
SCOPE (b)
3.0 V
10%
GND
< tr
Equivalent to: THÉVENIN EQUIVALENT
125 
OUTPUT
1.90 V
Commercial
ALL INPUT PULSES
90%
90%
10%
< tr
Switching Characteristics
Over the Operating Range[6]
Parameter
Description
READ CYCLE
tRC
tAA
tOHA
tACE
tLZCE
tHZCE
tPU
tPD
WRITE CYCLE[9]
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tLZWE
tHZWE
Read cycle time
Address to data valid
Output hold from address change
CE LOW to data valid
CE LOW to low Z[7]
CE HIGH to high Z[7, 8]
CE LOW to power-up
CE HIGH to power-down
Write cycle time
CE LOW to write end
Address setup to write end
Address hold from write end
Address setup to write start
WE pulse width
Data setup to write end
Data hold from write end
WE HIGH to low Z[7]
WE LOW to high Z[7, 8]
-25
Unit
Min
Max
25
–
ns
–
25
ns
3
–
ns
–
25
ns
3
–
ns
0
11
ns
0
–
ns
–
20
ns
25
–
ns
20
–
ns
20
–
ns
0
–
ns
0
–
ns
20
–
ns
15
–
ns
0
–
ns
3
–
ns
0
11
ns
Notes
5. tr = < 5 ns for the -25 and slower speeds.
6. Test conditions assume signal transition time of 5 ns or less for -25 and slower speeds, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and output
loading of the specified IOL/IOH and 30-pF load capacitance.
7. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device.
8. tHZCE and tHZWE are specified with CL = 5 pF as in part (b) in AC Test Loads and Waveforms. Transition is measured ±500 mV from steady-state voltage.
9. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate
a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write.
Document #: 001-06495 Rev. *D
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