BCM20705 Datasheet, PDF (46/67 Pages) Cypress Semiconductor – Single-Chip Bluetooth Transceiver and Baseband Processor

BCM20705 Data Sheet
Electrical Characteristics
Table 9: Power Supply
Parameter
DC supply voltage for RF
DC supply noise for RF, from 100 kHz to
1 MHz
DC supply voltage for core
DC supply voltage for I/O
DC supply voltage for USB
DC supply
Symbol
VDD_RF ^a
VDD_RF ^b
VDDC
VDDO
VDD_USB
VDDTF ^c
Minimum
1.159
–
Typical
1.22
–
1.159
1.22
1.7
–
3.0
3.3
1.12
–
Maximum
1.281
150
Unit
V
μV rms
1.281
V
3.6
V
3.6
V
3.0^d
V
a. VDD_RF collectively refers to the VDDIF, VDDLNA, VDDPX, VDDLNA, VDDRF RF power supplies.
b. Overall performance defined using integrated regulation.
c. VDDTF for Class 2 must be connected to VREG (main LDO output). VDDTF for Class 1 must be connected to
VREGHV (HV LDO output) or an external voltage source. Refer to the Broadcom compatibility guide for
configuration details. VDDTF requires a capacitor to ground. The value of the capacitor must be tuned to
ensure optimal RF RX sensitivity. Typical 10 pF for BGA packages and 6.2 pF for wafer package. The value
may depend on board layout.
d. Can be 3.3V if the output power is limited to 9 dBm.
Table 10: High-Voltage Regulator (HV LDO) Electrical Specifications
Parameter
Input voltage
Output voltage
Max current load
Load capacitance
Load capacitor ESR
PSRR
Turn-on time (C_load = 2.2 μF)
Dropout voltage
Minimum
2.3
1.8
–
1
0.01
20
–
–
Typical
–
–
–
–
–
–
–
–
Maximum Unit
5.5
V
3.3
V
95
mA
10
μF
2
Ω
40
dB
200
μs
200
mV
Parameter
Input voltage
Output voltage
Load current
Load capacitance
ESR
Turn-on time
PSRR
Dropout voltage
Table 11: Main Regulator (Main LDO) Electrical Specifications
Minimum
1.63
1.159
–
1
0.1
–
15
–
Typical
–
1.22
–
–
–
–
–
–
Maximum
3.63
1.281
60
2.2
0.5
300
–
200
Unit
V
V
mA
μF
Ω
μs
dB
mV
Broadcom®
Bluetooth Transceiver and Baseband Processor
November 13, 2014 • MCS20705-DS104-R
Page 45
BROADCOM CONFIDENTIAL