CY62126EV30 Datasheet, PDF (4/12 Pages) Cypress Semiconductor – 1-Mbit (64K x 16) Static RAM

CY62126EV30 MoBL^®
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Θ_JA
Θ_JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 4.25 x 1.125 inch,
two-layer printed circuit board
VFBGA
Package
58.85
17.01
TSOP II
Package
28.2
3.4
Unit
°C/W
°C/W
AC Test Loads and Waveforms
Figure 1. AC Test Loads and Waveforms
R1
V_CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R_TH
V_TH
ALL INPUT PULSES
V_CC
10% ^90%
90%
10%
R2
GND
Rise Time = 1 V/ns
Fall Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
R_TH
V_TH
2.2V - 2.7V
16600
15400
8000
1.2
2.7V - 3.6V
1103
1554
645
1.75
Unit
Ohms
Ohms
Ohms
Volts
Data Retention Characteristics
Over the Operating Range
Parameter
Description
Conditions
Min Typ^[1] Max
Unit
V_DR
I_CCDR[7]
t_CDR[8]
t_R[9]
V_CC for Data Retention
1.5
Data Retention Current V_CC= V_DR, CE > V_CC – 0.2V, Industrial
V_IN > V_CC – 0.2V or V_IN < 0.2V _Automotive
Chip Deselect to Data
0
Retention Time
Operation Recovery Time
t_RC
V
3
µA
30
µA
ns
ns
Data Retention Waveform
Figure 2. Data Retention Waveform
DATA RETENTION MODE
V_CC
V_CC(min)
V_DR > 1.5V
V_CC(min)
t_CDR
t_R
CE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V_CC ramp from V_DR to V_CC(min) > 100 µs.
Document #: 38-05486 Rev. *D
Page 4 of 12
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